Datasheet Details
| Part number | 2SD1913 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1913-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1913 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1913-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1274 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1913 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1913 | Power Transistor | GME |
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2SD1913 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1913 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SD1958 | NPN Transistor |
| 2SD1959 | NPN Transistor |
| 2SD1966 | NPN Transistor |
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