2SD1913 datasheet by Inchange Semiconductor.
| Part number | 2SD1913 |
|---|---|
| Datasheet | 2SD1913-INCHANGE.pdf |
| File Size | 209.72 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·plement to Type 2SB1274 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1913 | Power Transistor | GME |
 |
2SD1913 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
 |
2SD1913 | SILICON POWER TRANSISTOR | SavantIC |
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