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BL1N60F

Manufacturer: Galaxy Microelectronics
BL1N60F datasheet preview

Datasheet Details

Part number BL1N60F
Datasheet BL1N60F-GME.pdf
File Size 213.10 KB
Manufacturer Galaxy Microelectronics
Description N-Channel Power MOSFET
BL1N60F page 2 BL1N60F page 3

BL1N60F Overview

Production specification N-Channel Enhancement Mode Field Effect Transistor.

BL1N60F Key Features

  • RDS(ON) =9.3Ω@VGS = 10V
  • Ultra Low gate charge (typical 5.0nC)
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
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