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BL1N60F Datasheet N-Channel Power MOSFET

Manufacturer: Galaxy Microelectronics

Overview: Production specification N-Channel Enhancement Mode Field Effect.

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Key Features

  • RDS(ON) =9.3Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 5.0nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL1N60F ITO-220AB.

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