• Part: BL450N06-6L
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 544.87 KB
Download BL450N06-6L Datasheet PDF
Galaxy Microelectronics
BL450N06-6L
BL450N06-6L is N-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
Features - Advanced trench technology - Low on-resistance - Low gate charge - HBM: JESD22-A114-B: 1B N-Channel Enhancement Mode MOSFET BL450N06-6L APPLICATIONS - Power switching application - DC-DC converters Mechanical Data - Case: SOT-23-6L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-23-6L Ordering Information Part Number BL450N06-6L Package SOT-23-6L Shipping Quantity 3000 pcs / Tape & Reel Marking Code 450N06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 70°C) - 1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TA = 25°C) - 1 Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value 60 ±20 4.2 3.3 42 15 1.6 -55 ~ +150 -55 ~ +150 Unit V V A A A m J W °C...