BL450N06-6L
BL450N06-6L is N-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
Features
- Advanced trench technology
- Low on-resistance
- Low gate charge
- HBM: JESD22-A114-B: 1B
N-Channel Enhancement Mode MOSFET BL450N06-6L
APPLICATIONS
- Power switching application
- DC-DC converters
Mechanical Data
- Case: SOT-23-6L
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
SOT-23-6L
Ordering Information
Part Number BL450N06-6L
Package SOT-23-6L
Shipping Quantity 3000 pcs / Tape & Reel
Marking Code 450N06
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C)
- 1 Continuous Drain Current (TA = 70°C)
- 1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy
- 3 Power Dissipation (TA = 25°C)
- 1 Operating Junction Temperature Range Storage Temperature Range
Symbol VDSS VGSS
IDM EAS PD TJ TSTG
Value 60 ±20 4.2 3.3 42 15 1.6
-55 ~ +150 -55 ~ +150
Unit V V A A A m J W °C...