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BL450N06-6L - N-Channel Enhancement Mode MOSFET

Features

  • Advanced trench technology.
  • Low on-resistance.
  • Low gate charge.
  • HBM: JESD22-A114-B: 1B N-Channel Enhancement Mode MOSFET BL450N06-6L.

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Full PDF Text Transcription

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Features  Advanced trench technology  Low on-resistance  Low gate charge  HBM: JESD22-A114-B: 1B N-Channel Enhancement Mode MOSFET BL450N06-6L APPLICATIONS  Power switching application  DC-DC converters Mechanical Data  Case: SOT-23-6L  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-23-6L Ordering Information Part Number BL450N06-6L Package SOT-23-6L Shipping Quantity 3000 pcs / Tape & Reel Marking Code 450N06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 70°C) *1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy *3
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