BL4N50D
BL4N50D is N-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
Features
- High switching speed
N-Channel Enhancement Mode MOSFET BL4N50D
Mechanical Data
- Case: TO-252
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,
Method 208
TO-252
Ordering Information
Part Number BL4N50D
Package TO-252
Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current
Symbol VDSS VGSS ID IDM
Value 500 ±30 4 16
Thermal Characteristics
Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Air Operating Junction Temperature Range Storage Temperature Range
Symbol PD RθJC RθJA TJ TSTG
Value 83 1.5 62.5
-55 ~ +150 -55 ~ +150
Marking Code 4N50D
Unit V V A A
Unit W
°C/W °C/W
°C °C
MTM0419A: February 2021
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N-Channel Enhancement Mode MOSFET...
