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BL4N50F - N-Channel Power MOSFET

Key Features

  • RDS(ON) =2.0Ω@ VGS = 10V.
  • High Switching Speed.
  • 100% Avalanche Tested Pb Lead-free Production specification BL4N50F ITO-220AB.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4A,500V N-Channel Power Mosfet FEATURES  RDS(ON) =2.0Ω@ VGS = 10V  High Switching Speed  100% Avalanche Tested Pb Lead-free Production specification BL4N50F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 500 ±30 4 16 216 8.5 4.5 28 62.5 62.5 4.5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃/W ℃/W ℃ ℃ S071 Rev.A www.gmesemi.