Galaxy Century Microelectronics BL4N50F
N-Channel Power MOSFET
| Part No. | BL4N50F |
|---|---|
| Datasheet | BL4N50F Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(ON) =2.0Ω@ VGS = 10V● High Switching Speed
● 100% Avalanche Tested Pb Lead-free Production specification BL4N50F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 500 ±30 4 16 216 8.5 4.5 28 62.5 62.5 4.5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃/W ℃/W ℃ ℃ S071 Rev.A 1 Production specification 4A,500V N-Channel Power Mosfet BL4N50F
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-
