BL4N50F Overview
4A,500V N-Channel Power Mosfet.
BL4N50F Key Features
- RDS(ON) =2.0Ω@ VGS = 10V
- High Switching Speed
- 100% Avalanche Tested
- 55 to +150
BL4N50F Details
| Part number | BL4N50F |
|---|---|
| Datasheet | BL4N50F-GME.pdf |
| File Size | 241.73 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power MOSFET |
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