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BL4N60 - N-Channel Power Mosfet

Key Features

  • RDS(ON) =2.5Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 15 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 8.0 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL4N60.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL4N60 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage TO-220AB Value 600 ±30 Units V V IAR Avalanche Current (Note1) 4.4 A ID Continuous Drain Current 4.0 A IDM EAS EAR dv/dt PD θJA θJC θCS TJ Pulsed Drain Current Avalanche Energy Single Pulsed(Note2) Repetitive Peak Diode Recovery dv/dt(Note3) 16 260 10.6 4.5 Power Dissipation 106 Junction-to-Ambient 62.