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BL4N60F - N-Channel Power MOSFET

Datasheet Summary

Features

  • RDS(ON) =2.5Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 15 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 8.0 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL4N60F.

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Datasheet Details

Part number BL4N60F
Manufacturer GME
File Size 456.64 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BL4N60F Datasheet
Additional preview pages of the BL4N60F datasheet.

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Full PDF Text Transcription

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4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL4N60F MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature ITO-220AB Value 600 ±30 4.0 16 260 10.6 4.
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