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BL4N65F - N-Channel Power MOSFET

Key Features

  • RDS(ON) =2.5Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 15 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 8.0 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL4N65F.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL4N65F MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature ITO-220AB Value 650 ±30 4.0 16 260 10.6 4.5 36 62.