BL450P04R Datasheet | Galaxy Microelectronics

Features - Advanced trench technology - Super low gate charge - Excellent Cd V/dt effect decline - HBM: JESD22-A114-B: 1B P-Channel Enhancement Mode MOSFET BL450P04R Mechanical Data - Case: SOT-223 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number BL450P04R Package SOT-223 Shipping Quantity 4000 pcs / Tape & Reel Marking Code 450P04R Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TA = 25°C) - 1 Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value -40 ±20 -6 -3.8 -48 36 2.5 -55 ~ +150 -55 ~ +150 Unit V V A A A m J W °C °C Thermal Characteristics Parameter Thermal Resistance Junction-to-Air -...