BL7N65
BL7N65 is manufactured by Galaxy Microelectronics.
7A,650V N-Channel Power Mosfet
Features
- RDS(ON) =1.35Ω@ VGS = 10V
- Ultra low gate charge ( typical 30 nC )
Pb
Lead-free
- Low reverse transfer Capacitance ( CRSS = typical 18 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
Production specification
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
EAS Avalanche Energy PD Power Dissipation
Single Pulsed
TJ Junction Temperature
TOPR, Tstg Operating and Storage Temperature
TO-220AB
Value 650 ±20 7.0 28 450 100 +150 -55 to...
