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BL7N80F - N-Channel Power Mosfet

Features

  • 7A, 800V, RDS(on)=1.9Ω@VGS =10V.
  • High switching speed.
  • 100% avalanche tested Production specification BL7N80F ITO-220AB.

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Full PDF Text Transcription

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N-Channel Power MOSFET FEATURES  7A, 800V, RDS(on)=1.9Ω@VGS =10V  High switching speed  100% avalanche tested Production specification BL7N80F ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 800 Unit V VGS Gate -Source Voltage ID Drain Current Continuous at IDM Drain Current(pulsed)Note1 TC=25℃ ±30 7 26.4 V A A PD Power Dissipation 48 W EAS Avalanche Energy(Single Pulsed (Note 2)) 580 mJ EAR Avalanche Energy (Repetitive(Note 1)) 16.7 mJ RθJA Thermal Resistance,Junction-to-Ambient 62.5 ℃/W RθJC Thermal Resistance,Junction-to-Case 2.6 ℃/W Tj Tstg Junction and StorageTemperature Range -55 to +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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