BL7N80F
BL7N80F is manufactured by Galaxy Microelectronics.
N-Channel Power MOSFET
Features
- 7A, 800V, RDS(on)=1.9Ω@VGS =10V
- High switching speed
- 100% avalanche tested
Production specification
ITO-220AB
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
VDS Drain-Source Voltage
Unit V
VGS Gate -Source Voltage ID Drain Current Continuous at IDM Drain Current(pulsed)Note1
TC=25℃
±30 7 26.4
PD Power Dissipation
48 W
EAS Avalanche Energy(Single Pulsed (Note 2))
580 mJ
EAR Avalanche Energy (Repetitive(Note 1))
16.7 mJ
RθJA Thermal Resistance,Junction-to-Ambient
62.5 ℃/W
RθJC Thermal Resistance,Junction-to-Case
2.6 ℃/W
Tj Tstg
Junction and StorageTemperature Range
-55 to +150...
