BL7N65F Datasheet | Galaxy Microelectronics

7A,650VN-ChannelPowerMosfet Features - RDS(ON)=1.35Ω@VGS = 10V - Ultra low gate charge ( typical 30nC ) Pb Lead-free - Low reverse transfer Capacitance ( CRSS = typical 18 pF ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness Production specification ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VDSS VGSS Parameter Drain-Source voltage Gate -Source voltage Value 650 ±20 ID Continuous DrainCurrent IDM Pulsed Drain Current EAS Avalanche Energy PD Power Dissipation TJ Junction Temperature Single Pulsed 28 450 100 +150 TOPR, Tstg Operatingand Storage Temperature -55 to +150 Units V V A A...