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BL7N65F - N-Channel Power Mosfet

Features

  • RDS(ON)=1.35Ω@VGS = 10V.
  • Ultra low gate charge ( typical 30nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 18 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL7N65F ITO-220AB.

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Full PDF Text Transcription

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7A,650VN-ChannelPowerMosfet FEATURES  RDS(ON)=1.35Ω@VGS = 10V  Ultra low gate charge ( typical 30nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 18 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL7N65F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VDSS VGSS Parameter Drain-Source voltage Gate -Source voltage Value 650 ±20 ID Continuous DrainCurrent 7.0 IDM Pulsed Drain Current EAS Avalanche Energy PD Power Dissipation TJ Junction Temperature Single Pulsed 28 450 100 +150 TOPR, Tstg Operatingand Storage Temperature -55 to +150 Units V V A A mJ W ℃ ℃ S066 Rev.A www.gmesemi.
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