BL9N30F Description
N-Channel MOSFET 300V,9A,450mΩ.
BL9N30F Key Features
- 9.0 A, 300 V, RDS(on) = 450 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 17 nC)
- Low Crss (Typ. 16 pF)
- 100% Avalanche Tested
- Part: BL9N30F
- Manufacturer: Galaxy Microelectronics
- Size: 493.65 KB
Related Galaxy Microelectronics Datasheets
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