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BL9N30F - N-Channel Power Mosfet

Datasheet Summary

Features

  • 9.0 A, 300 V, RDS(on) = 450 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 17 nC).
  • Low Crss (Typ. 16 pF).
  • 100% Avalanche Tested Pb Lead-free Production specification BL9N30F.

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Datasheet Details

Part number BL9N30F
Manufacturer GME
File Size 493.65 KB
Description N-Channel Power Mosfet
Datasheet download datasheet BL9N30F Datasheet
Additional preview pages of the BL9N30F datasheet.

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Full PDF Text Transcription

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N-Channel MOSFET 300V,9A,450mΩ FEATURES  9.0 A, 300 V, RDS(on) = 450 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A  Low Gate Charge (Typ. 17 nC)  Low Crss (Typ. 16 pF)  100% Avalanche Tested Pb Lead-free Production specification BL9N30F Applications  Power switch circuit of adaptor and charger. ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 300 V VGS Gate -Source voltage ±30 V Continuous Drain current 9.0 A ID Continuous Drain current TC=100℃ 5.7 A IDM(Note1) EAS(Note2) EAR(Note1) IAR(Note1) dv/dt(Note3) Pulsed Drain current Single Pulse Avalanche Energy Avalanche Energy,Repetitive Avalanche Current Peak Diode Recovery dv/dt 36 A 420 mJ 9.8 mJ 9.0 A 4.
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