BL9N30F Overview
N-Channel MOSFET 300V,9A,450mΩ.
BL9N30F Key Features
- 9.0 A, 300 V, RDS(on) = 450 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 17 nC)
- Low Crss (Typ. 16 pF)
- 100% Avalanche Tested
Datasheet Details
| Part number | BL9N30F |
|---|---|
| Datasheet | BL9N30F-GME.pdf |
| File Size | 493.65 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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