BL9N30F Datasheet | Galaxy Microelectronics

N-Channel MOSFET 300V,9A,450mΩ Features - 9.0 A, 300 V, RDS(on) = 450 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A - Low Gate Charge (Typ. 17 n C) - Low Crss (Typ. 16 p F) - 100% Avalanche Tested Pb Lead-free Production specification Applications - Power switch circuit of adaptor and charger. ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 300 V VGS Gate -Source voltage ±30 Continuous Drain current 9.0 A Continuous Drain current TC=100℃ IDM(Note1) EAS(Note2) EAR(Note1) IAR(Note1) dv/dt(Note3) Pulsed Drain current Single Pulse Avalanche Energy Avalanche Energy,Repetitive Avalanche Current Peak Diode Recovery dv/dt 36 A 420 m J 9.8 m J 9.0 A 4.5 V/ns Power Dissipation PD Derating Fcator above 25℃ 98 W 0.78...