FZT851 Datasheet | Galaxy Microelectronics

Features - Epitaxial planar die construction - High continuous collector current - Low saturation voltage VCE(SAT) NPN Silicon Epitaxial Planar Transistor FZT851 Mechanical Data - Case: SOT-223 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number Package SOT-223 Shipping Quantity 4000 pcs / Tape & Reel Marking Code Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICM Value 150 60 7 6 20 Unit V V V A A Thermal Characteristics Parameter Symbol Power Dissipation Thermal Resistance (Junction-to-Ambient) - 1 RθJA Thermal Resistance (Junction-to-Case) - 1 RθJC Thermal Resistance (Junction-to-Lead) -...