FZT851 Description
Features Epitaxial planar die construction High continuous collector current Low saturation voltage VCE(SAT) NPN Silicon Epitaxial Planar Transistor FZT851 Case: UL Flammability Classification Rating 94V-0 Terminals: February 2024 [2.0] .gmesemi.
FZT851 Key Features
- Epitaxial planar die construction
- High continuous collector current
- Low saturation voltage VCE(SAT)
- Case: SOT-223
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
- DC Current Gain
- VCE = 1V, IC = 10A
- IC = 100mA, IB = 5mA
- IC = 6A, IB = 300mA