Datasheet4U Logo Datasheet4U.com

KTA1666 - PNP Silicon Epitaxial Planar Transistor

Key Features

  • Pb z High speed switching time. Lead-free z Low saturation voltage:VCE(sat)=-0.5V(Max) z PC=1~2W(Mounted on ceramic substrate) z Small flat package. z Complementary: KTC4379. KTA1666.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KTA1666 Silicon PNP transistor BLUE ROCKET ELECTRONICS
KTA1666 PNP Transistor JCST
KTA1666 PNP Transistors Kexin
KTA1666 PNP Transistor WEJ
KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR WEITRON

Other Datasheets by Galaxy Microelectronics

Part Number Description
KTA1663 PNP Silicon Epitaxial Planar Transistor
KTA1664 PNP Silicon Epitaxial Planar Transistor
KTA1273 PNP Silicon Epitaxial Planar Transistor
KTA1275 PNP Silicon Epitaxial Planar Transistor
KTA1298 Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Pb z High speed switching time. Lead-free z Low saturation voltage:VCE(sat)=-0.5V(Max) z PC=1~2W(Mounted on ceramic substrate) z Small flat package. z Complementary: KTC4379. KTA1666 APPLICATIONS z Power amplifier application. z Power switching application. ORDERING INFORMATION Type No. Marking KTA1666 WO/WY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Junction Temperature Storage Temperature Range -50 -50 -5 -2 -0.4 500 150 -55 to +150 Units V V V A A mW ℃ ℃ E001 Rev.