| Part Number | KTA1666 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
PNP Silicon Epitaxial Planar Transistor KTA1666
Features
Excellent DC current gain characteristics Low saturation voltage typically Complement to KTC4379 RoHS compliant with Halogen-free
Mech.
* Excellent DC current gain characteristics * Low saturation voltage typically * Complement to KTC4379 * RoHS compliant with Halogen-free Mechanical Data * Case: SOT-89 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderability per MIL-STD-202, Method 208. |
KTA1666 Datasheet and Specifications PDF
The KTA1666 is a PNP Silicon Epitaxial Planar Transistor.
| Part Number | KTA1666 Datasheet |
|---|---|
| Description | PNP Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
PNP Transistors KTA1666
Transistors
■ Features
● Small Flat Package ● Low Saturation Voltage ● Power Amplifier and Switching Application ● Comlementary to KTC4379
1.70 0.1
0.42 0.1
0.46.
* Small Flat Package * Low Saturation Voltage * Power Amplifier and Switching Application * Comlementary to KTC4379 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter * Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage C. |
| Part Number | KTA1666 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCST |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTA1666 TRANSISTOR (PNP) FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Volta. z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitt. |
| Part Number | KTA1666 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | WEJ |
| Overview | RoHS KTA1666 KTA1666 TRANSISTOR (PNP) SOT-89 DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage -2 A OV(BR)CBO: -50 V Operating and storage j. Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage -2 A OV(BR)CBO: -50 V Operating and storage junction temperature range 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CTJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ ICParameter Symbol unles. |