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KTA1666 - PNP Transistor

Key Features

  • Power dissipation TPCM: 0.5 W (Tamb=25℃) . ,LCollector current ICM: Collector-base voltage -2 A OV(BR)CBO: -50 V Operating and storage junction temperature range 1. BASE 2.

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Datasheet Details

Part number KTA1666
Manufacturer WEJ
File Size 138.67 KB
Description PNP Transistor
Datasheet download datasheet KTA1666 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RoHS KTA1666 KTA1666 TRANSISTOR (PNP) SOT-89 DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage -2 A OV(BR)CBO: -50 V Operating and storage junction temperature range 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CTJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ ICParameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -50 V NCollector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -50 V OEmitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA REmitter cut-off current IEBO VEB=-5V, IC=0 -0.