Galaxy Century Microelectronics MMBD101
Schottky Barrier Diodes
FEATURES
z Low noise figure -6.0dB @1.0GHz. Pb z Surface mount package ideally suited Lead-free for automatic insertion. z Very low capacitance –less than 1.0pF @zero volts. z High forward conductance -0.5volts (typ.) @IF=10mA.APPLICATIONS
z High speed switching. SOT-23 ORDERING INFORMATION Type No. MMBD101 Marking 4M Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol DC Reverse Voltage VR Power Dissipation Pd Operating Junction Temperature Range Tj Storage Temperature Range TSTG Limits 7.0 225 150 -55 to +150 Unit V mW ℃ ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Characteristic Symbol Min. TYP. MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 7.0 10 V IR=10μA Forward Voltage VF 0.5 0.6 V IF=10mA Reverse Current IR 0.02 0.25 μA VR=3.0V Diode Capacitance CT 0.88 1.0 pF VR=0V,f=1MHz C132 Rev.A