LGE MMBD101
Schottky Barrier Diode
FEATURES
Low noise figure -6.0dB @1.0GHz Surface mount package ideally suited for automatic insertion. Very low capacitance –less than 1.0pF @zero volts. High forward conductance -0.5volts (typ.) @IF=10mA.APPLICATIONS
High speed switching. Ordering Information Type No. Marking MMBD101 4M Dimensions in inches and (millimeters) Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol DC Reverse Voltage VR Power Dissipation Pd Operating Junction Temperature Range Tj Storage Temperature Range TSTG Limits 7.0 225 150 -55 to +150 Unit V mW ℃ ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Characteristic Symbol Min. TYP. MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 7.0 10 V IR=10μA Forward Voltage Reverse Current Diode Capacitance VF IR CD 0.5 0.6 mV IF=10mA 0.02 0.25 μA 0.88 1.0 pF VR=3.0V VR=0V,f=1MHz mail:l