Galaxy Century Microelectronics MMBT2222AT
NPN Silicon Epitaxial Planar Transistor
FEATURES
● Epitaxial planar die construction● Complimentary to MMBT2907AT
● Ultra-small surface mount package NPN Silicon Epitaxial Planar Transistor MMBT2222AT Mechanic al Data
● Case: SOT-523
● Molding compound: UL flammability classification rating 94V-0
● Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-523 Ordering Information Part Number MMBT2222AT Package SOT-523 Shipping Quantity 3000 pcs / Tape & Reel Marking Code 1P
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Continuous Collector Current Peak Collector Current (pulse width ≤ 40μs, δ = 0.35) Continuous Base Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value 75 40 6 0.6 1.5 0.15 0.2 Unit V V V A A A A Thermal Characteristics Parameter Power Dissipation *1 Thermal Resistance Junction-to-Air *1 Thermal Resistance Junction-to-Air *2 Thermal Resistance Junction-to-Case *2 T...