The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Production specification
NPN SWITCHING TRANSISTOR
FEATURES
z Epitaxial planar die construction. z Complementary PNP type available
(MMBT2907AT). z Collector Current Capability Ic=600mA. z Ultra-small surface mount package.
Pb
Lead-free
MMBT2222AT
APPLICATIONS
z General switching and amplification.
ORDERING INFORMATION
Type No.
Marking
MMBT2222AT
1P
SOT-523
Package Code SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
MMBT3904T
VCBO
collector-base voltage
75
VCEO
collector-emitter voltage
40
VEBO
emitter-base voltage
6
IC collector current (DC)
600
Pd Power dissipation
150
RθJA
Thermal resistance, junction to Ambient
833
Tstg storage temperature range
-55 to +150
Tj junction temperature
150
UNIT V V V mA mW °C/W °C °C
H020 Rev.