Weitron Technology MMBT2222AT
Plastic-Encapsulate Transistors
| Part No. | MMBT2222AT |
|---|---|
| Datasheet | MMBT2222AT Download |
| Manufacturer |  Weitron Technology |
| Description | Plastic-Encapsulate Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC 1 2 3 SC-89 (SOT-523F) Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature DEVICE MARKING MMBT2222AT=1P Symbol PD RθJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W CELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)(2) Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Base Cutoff Current (VCE= 60 Vdc, VEB= 3.0 V) Collector Cutoff Current (VCE= 60 Vdc, VEB= 3.0 V) V(BR)CEO 40 - V V(BR)CBO 75 - V V(BR)EBO 6.0 - V IBL - 20 nA I
