WEJ MMBT2222AT
NPN Transistor
| Part No. | MMBT2222AT |
|---|---|
| Datasheet | MMBT2222AT Download |
| Manufacturer |  WEJ |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
1. BASE Power dissipation PCM: 0.15 W (Tamb=25℃) DCollector current ICM: 0.6 A TCollector-base voltage V(BR)CBO: 75 V .,LOperating and storage junction temperature range 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ OELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX CCollector-base breakdown voltage Collector-emitter breakdown voltage ICEmitter-base breakdown voltage Collector cut-off current NCollector cut-off current Emitter cut-off current RODC current gain CTCollector-emitter saturation voltage LEBase-emitter saturation voltage ETransition frequency Output Capacitance JDelay time ERise time WStorage time V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob td tr tS Ic= 10µA, IE=0 Ic= 10mA, IB=0 IE=10µA, IC=0 VCB=70V, IE=0 VCE=35V, IB=0 VEB= 3V, IC=0 VCE=10V, IC= 0.1mA VCE=10V, IC= 1mA VCE=10V, IC= 10mA VCE=10V, IC= 150mA VCE=10V, IC= 500mA IC=150...