MMBT3906M
MMBT3906M is PNP General Purpose Transistor manufactured by Galaxy Microelectronics.
FEATURES
- Epitaxial planar die construction.
- plementary NPN type available
(MMBT3904M).
- Collector Current Capability ICM =-200m A.
- Low Voltage (Max: -40V).
APPLICATIONS
- Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No. MMBT3906M
Marking 2A
Product Specification
SOT-723 Package Code
SOT-723
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
Value
VCBO collector-base voltage
VCEO collector-emitter voltage
VEBO emitter-base voltage
IC collector current (DC)
ICM peak collector current
IBM peak base current
Ptot TSTG
Total power dissipation storage temperature
TJ junction temperature
Note: Transistor mounted on an FR4 printed-circuit board.
-40 -40 -6 -100 -200 -100 250 -65 to +150 150
UNIT
V V V m A m A m A m W °C °C
STM0442A
.gmesemi. 1
Product Specification
PNP General Purpose Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX.
ICBO collector cut-off current
IE = 0; VCB = -30...
