MMBT3906M Description
PNP General Purpose Transistor.
MMBT3906M Key Features
- Epitaxial planar die construction
- plementary NPN type available
- Collector Current Capability ICM =-200mA
- Low Voltage (Max: -40V)
MMBT3906M Applications
- Ideal for medium power amplification and switching
- 40 -40 -6 -100 -200 -100 250 -65 to +150 150