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MMST5551 - NPN General Purpose Transistor

Key Features

  • z Epitaxial planar die construction. z Complementary PNP type available (MMST5401). z Also available in lead free version. Pb Lead-free MMST5551.

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Production specification NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMST5401). z Also available in lead free version. Pb Lead-free MMST5551 APPLICATIONS z Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMST5551 K4N SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage 180 VCEO collector-emitter voltage 160 VEBO emitter-base voltage 6 IC collector current (DC) 0.6 PC Collector dissipation 0.3 RθJA Thermal resistance junction to ambient 625 Tj ,Tstg junction and storage temperature -55 to +150 UNIT V V V A W °C/W °C F056 Rev.A www.gmicroelec.