MMST5551
MMST5551 is NPN Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features
- Epitaxial planar die construction
- plementary PNP type available(MMST5401)
Mechanical Data
- Case: SOT-323
- Molding pound: UL flammability classification rating 94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
SOT-323
Ordering Information
Part Number MMST5551
Package SOT-323
Shipping Quantity 3000 pcs / Tape & Reel
Marking Code K4N
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Peak)
Symbol VCBO VCEO VEBO IC ICM
Value 180 160 6 0.6 0.8
Unit V V V A A
Thermal Characteristics
Parameter Power Dissipation Thermal Resistance Junction-to-Air Junction Temperature Range Storage Temperature Range
Symbol PD RθJA TJ TSTG
Value 0.2 625
-55 ~ +150 -55 ~ +150
Unit W
°C/W °C °C
STM0358A: August 2022
.gmesemi.
NPN Silicon Epitaxial Planar Transistor MMST5551
Electrical Characteristics (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage Collector-base Output Capacitance Current-Gain- Bandwidth Product
Symbol
Test Condition
Min. Typ. Max. Unit
V(BR)CBO IC = 100μA, IE = 0
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