Galaxy Century Microelectronics MMST5551
NPN Silicon Epitaxial Planar Transistor
| Part No. | MMST5551 |
|---|---|
| Datasheet | MMST5551 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Epitaxial planar die construction● Complementary PNP type available(MMST5401)
MECHANICAL DATA
● Case: SOT-323● Molding compound: UL flammability classification rating 94V-0
● Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-323 Ordering Information Part Number MMST5551 Package SOT-323 Shipping Quantity 3000 pcs / Tape & Reel Marking Code K4N
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Peak) Symbol VCBO VCEO VEBO IC ICM Value 180 160 6 0.6 0.8 Unit V V V A A Thermal Characteristics Parameter Power Dissipation Thermal Resistance Junction-to-Air Junction Temperature Range Storage Temperature Range Symbol PD RθJA TJ TSTG Value 0.2 625 -55 ~ +150 -55 ~ +150 Unit W °C/W °C °C STM0358A: August 2022 1 NPN Silicon Epitaxial Planar Transistor MMST5551ELECTRICAL CHARACTERISTICS
(@ TA = 25°C unless other...
