MMST5551 Datasheet | Semiware Semiconductor

FEATURES plementary to MMST5401 Power Dissipation of 200m W High Stability and High Reliability MECHANICAL DATA SOT-323 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°C ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal resistance From junction to ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Plastic-Encapsulate Transistor (NPN) 3 1 2 SOT-323 K4N Marking C (3) (1) B E (2) Schematic Symbol Value 180 160 6 600 200 625 150 -55~+150 Unit V m A m W ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (NPN) ELECTRICAL CHARACTERISTICS (TA=25°C) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage V- (BR)CEO V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain h FE(1)- h FE(2)- h FE(3)- Collector-emitter saturation voltage VCE(sat)1- VCE(sat)2- Base-emitter saturation voltage Transition...