Semiware MMST5551
NPN Plastic-Encapsulate Transistor
| Part No. | MMST5551 |
|---|---|
| Datasheet | MMST5551 Download |
| Manufacturer |  Semiware |
| Description | NPN Plastic-Encapsulate Transistor |
| Buy | Stock & Price |
FEATURES
Complementary to MMST5401 Power Dissipation of 200mW High Stability and High ReliabilityMECHANICAL DATA
SOT-323 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003MAXIMUM RATINGS
(TA=25°C ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal resistance From junction to ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG MMST5551 Plastic-Encapsulate Transistor (NPN) 3 1 2 SOT-323 K4N Marking C (3) (1) B E (2) Schematic Symbol Value 180 160 6 600 200 625 150 -55~+150 Unit V mA mW ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will R MMST5551 Plastic-Encapsulate Transistor (NPN)ELECTRICAL CHARACTERISTICS
(TA=25°C) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown volta...
