PBSS4160T Datasheet | Galaxy Microelectronics

Production specification NPN Low VCEsat Transistor Features z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERING INFORMATION Type No. Marking U5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM peak collector current (t = 1 ms or limited by Tj(max))...