PBSS4160T - NPN transistor

NXP Semiconductors

General Description

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5160T.

Key Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High efficiency, reduces heat generation.
Reduces printed-circuit board area required.
Cost effective replacement for medium power transistor BCP55 and BCX55.

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PBSS4160T npn transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PBSS4160T
Manufacturer	NXP Semiconductors
File Size	109.51 KB
Description	NPN transistor
Datasheet	PBSS4160T Datasheet

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Other Datasheets by NXP Semiconductors

Part Number	Description
PBSS4160DPN	NPN/PNP low VCEsat (BISS) transistor
PBSS4160DS	NPN/NPN transistor
PBSS4160K	1 A NPN low VCEsat (BISS) transistor
PBSS4160PAN	NPN/NPN low VCEsat (BISS) transistor
PBSS4160PANP	NPN/NPN transistor

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet PBSS4160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power – Telecom infrastructure – Industrial. • Power management: – DC-to-DC conversion – Supply line switching. • Peripheral driver – Driver in low supply voltage applications (e.g.