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PBSS4160DPN - NPN/PNP low VCEsat (BISS) transistor

General Description

NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package.

Key Features

  • s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required. 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 3 June 2004 Objective data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. 1.2 Features s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required. 1.3 Applications s Power management x DC-to-DC conversion x Supply line switching s Peripheral driver x Inductive load drivers (e.g. relays, buzzers and motors) x Driver in low supply voltage applications (e.g. lamps and LEDs). 1.