PBSS4160X
PBSS4160X is NPN transistor manufactured by Nexperia.
description
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- DC-to-DC conversion
- Supply line switches
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current ICM peak collector current h FE DC current gain
Conditions open base single pulse; tp ≤ 1 ms VCE = 10 V; IC = 500 m A; Tamb = 25 °C [1]
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
Min Typ Max Unit
- - 60 V
--170
- 1A 2A 360
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 E emitter 2 C collector 3 B base
Simplified outline
SOT89
Graphic symbol
E sym123
6. Ordering information
Table 3. Ordering...
