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PBSS4160PAN Datasheet NPN/npn Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: DF N2 020 -6 PBSS4160PAN 14 January 2013 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1.

General Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4160PANP.

PNP/PNP complement: PBSS5160PAP.

Key Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3.

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