PBSS4160PANS-Q
PBSS4160PANS-Q is 60V 1A NPN/NPN low VCEsat transistor manufactured by Nexperia.
description
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP/PNP plement: PBSS5160PAPS-Q
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- Exposed heat sink for excellent thermal and electrical conductivity
- High energy efficiency due to less heat generation
- Suitable for Automatic Optical Inspection (AOI) of solder joints
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- LED lighting
- Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO collector-emitter voltage
IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = 0.5 A; IB = 50 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- -
- -
- -
1.5 A
- -
240 mΩ
Nexperia
60 V, 1 A NPN/NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning...
