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PBSS4160PANS-Q Datasheet 60v 1a NPN/npn Low Vcesat Transistor

Manufacturer: Nexperia

Overview: PBSS4160PANS-Q 60 V, 1 A NPN/NPN low VCEsat transistor 7 April 2025 Product data sheet 1.

General Description

NPN/NPN low VCEsat transistor in a leadless medium power DFN2020D-6 (SOT1118D) SurfaceMounted Device (SMD) plastic package with visible and solderable side pads.

PNP/PNP plement: PBSS5160PAPS-Q 2.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • High energy efficiency due to less heat generation.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • Qualified according to AEC-Q101 and recommende.

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