PBSS4160PANS-Q Description
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020D-6 (SOT1118D) SurfaceMounted Device (SMD) plastic package with visible and solderable side pads.
PBSS4160PANS-Q Key Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- Exposed heat sink for excellent thermal and electrical conductivity
- High energy efficiency due to less heat generation
- Suitable for Automatic Optical Inspection (AOI) of solder joints
- Qualified according to AEC-Q101 and remended for use in automotive