Datasheet Summary
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60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Rev. 02
- 27 June 2005 Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP plement: PBSS5160DS.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications s Dual low power switches (e.g. motors, fans) s Automotive...
