PBSS4160DS - NPN/NPN transistor

NXP Semiconductors

General Description

NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

PNP complement: PBSS5160DS.

Key Features

s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efﬁciency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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PBSS4160DS npn/npn transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PBSS4160DS
Manufacturer	NXP Semiconductors
File Size	192.20 KB
Description	NPN/NPN transistor
Datasheet	PBSS4160DS Datasheet

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Other Datasheets by NXP Semiconductors

Part Number	Description
PBSS4160DPN	NPN/PNP low VCEsat (BISS) transistor
PBSS4160K	1 A NPN low VCEsat (BISS) transistor
PBSS4160PAN	NPN/NPN low VCEsat (BISS) transistor
PBSS4160PANP	NPN/NPN transistor
PBSS4160T	NPN transistor

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product proﬁle 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efﬁciency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s Dual low power switches (e.g. motors, fans) s Automotive applications 1.