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PBSS4160PANS - NPN/NPN Transistor

General Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/PNP complement: PBSS4160PANPS.

PNP/PNP complement: PBSS5160PAPS.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • High energy efficiency due to less heat generation.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified 3.

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Other Datasheets by Nexperia

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PBSS4160PANS-Q 60V 1A NPN/NPN low VCEsat transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS. 2.