Datasheet4U Logo Datasheet4U.com

PBSS4160PANPS - NPN/NPN Transistor

General Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/NPN complement: PBSS4160PANS.

PNP/PNP complement: PBSS5160PAPS.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • High energy efficiency due to less heat generation.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS4160PANP NPN/NPN transistor NXP
PBSS4160PAN NPN/NPN low VCEsat (BISS) transistor NXP
PBSS4160DPN NPN/PNP low VCEsat (BISS) transistor NXP
PBSS4160DS NPN/NPN transistor NXP
PBSS4160K 1 A NPN low VCEsat (BISS) transistor NXP

Other Datasheets by Nexperia

Part Number Description
PBSS4160PANP NPN/NPN transistor
PBSS4160PAN 1A NPN/NPN low VCEsat (BISS) transistor
PBSS4160PANS NPN/NPN Transistor
PBSS4160PANS-Q 60V 1A NPN/NPN low VCEsat transistor
PBSS4160DPN 60V 1A NPN/PNP low VCEsat transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. 2.