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PBSS4160DPN - 60V 1A NPN/PNP low VCEsat transistor

General Description

NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS4160DPN
Manufacturer Nexperia
File Size 369.90 KB
Description 60V 1A NPN/PNP low VCEsat transistor
Datasheet download datasheet PBSS4160DPN Datasheet

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PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat transistor 3 March 2025 Product data sheet 1. General description NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • AEC-Q101 qualified 3. Applications • Complementary MOSFET driver • Half and full bridge motor drivers • Dual low power switches (e.g. motors, fans) • Automotive applications 4. Quick reference data Table 1.