PBSS4160DPN Overview
NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
PBSS4160DPN Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
