PBSS4160V
PBSS4160V is NPN transistor manufactured by NXP Semiconductors.
description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP plement: PBSS5160V.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications s Major application segments: x Automotive x Tele infrastructure x Industrial s Power management: x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance t = 1 ms or limited by Tj(max) IC = 1 A; IB = 100 m A
[2]
Conditions open base
[1]
Min
- Typ 200
Max Unit 60 1 2 250 V A A mΩ
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter
6 5 4 3 4 sym014
Simplified outline
Symbol
1, 2, 5, 6
SOT666
3. Ordering information
Table 3: Ordering information Package Name PBSS4160V Description plastic surface mounted package; 6 leads Version SOT666 Type number
4. Marking
Table 4: Marking codes Marking code 41 Type number PBSS4160V
9397 750 14359
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02
- 31 January 2005
2 of 14
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting...
