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PBSS4160V - NPN transistor

General Description

Low VCEsat (BISS) NPN transistor in a SOT666 plastic package.

PNP complement: PBSS5160V.

Key Features

  • s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3 Applications s Major application segments: x Automotive x Telecom infrastructure x Industrial s Power management: x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications (e.g.