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PBSS5160T - PNP Transistor

Key Features

  • z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free PBSS5160T.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
PBSS4160T NPN Low VCEsat Transistor

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Production specification PNP Low VCEsat(BISS) Transistor FEATURES z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free PBSS5160T APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERING INFORMATION Type No. Marking PBSS5160T U6 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM peak collector current (t = 1 ms or limited by Tj(max)) IB base current (DC) IBM peak base current (tp ≤ 300 ms; δ≤ 0.02) Value -80 -60 -5 -0.