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G23N06 - N-Channel Enhancement Mode Power MOSFET

Download the G23N06 datasheet PDF. This datasheet also covers the G23N06K variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 60V 23A < 35mΩ < 40mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G23N06K-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G23N06
Manufacturer GOFORD
File Size 572.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G23N06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G23N06K N-Channel Enhancement Mode Power MOSFET
G230P06 P-Channel Enhancement Mode Power MOSFET
G230P06K P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET Description The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.