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G23N06 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G23N06, a member of the G23N06K N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 60V 23A < 35mΩ < 40mΩ Schematic diagram.

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Datasheet preview – G23N06

Datasheet Details

Part number G23N06
Manufacturer GOFORD
File Size 572.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G23N06 Datasheet
Additional preview pages of the G23N06 datasheet.

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Other Datasheets by GOFORD
  • G23N06K - N-Channel Enhancement Mode Power MOSFET
  • G230P06 - P-Channel Enhancement Mode Power MOSFET
  • G230P06K - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET Description The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
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