G23N06 Overview
The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | G23N06 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 572.76 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | G23N06 G23N06K Datasheet (PDF) |
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The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| G23N06K | N-Channel Enhancement Mode Power MOSFET |
| G230P06 | P-Channel Enhancement Mode Power MOSFET |
| G230P06K | P-Channel Enhancement Mode Power MOSFET |