G23N06 Description
The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G23N06 is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Part Number | Description |
|---|---|
| G23N06K | N-Channel Enhancement Mode Power MOSFET |
| G230P06 | P-Channel Enhancement Mode Power MOSFET |
| G230P06K | P-Channel Enhancement Mode Power MOSFET |
The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.