Part G23N06
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer GOFORD
Size 572.76 KB
GOFORD

G23N06 Overview

Description

The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 60V 23A < 35mΩ < 40mΩ