G23N06K
G23N06K is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l Ro HS pliant
60V 23A < 35mΩ
< 40mΩ
Schematic diagram
Application l Power switch l DC/DC converters
TO-252
Device G23N06K
Package TO-252
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