G23N06K Overview
GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS pliant 60V 23A < 35mΩ < 40mΩ Schematic diagram Application l Power switch l DC/DC converters TO-252 Device G23N06K Package...