G2K3N10 Overview
Key Specifications
Description
The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part | G2K3N10 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Category | MOSFET |
| Manufacturer | GOFORD |
| Size | 956.69 KB |
Pricing from 0.074 USD, available from Verical and DigiKey.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 3000 | 3000+ : 0.074 USD | View Offer |
| DigiKey | 673 | 1+ : 0.53 USD 10+ : 0.327 USD 100+ : 0.2076 USD 500+ : 0.15612 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |