G2K3N10 - N-Channel Enhancement Mode Power MOSFET

Download the G2K3N10 datasheet PDF. This datasheet also covers the G2K3N10G variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A < 220mΩ < 230mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

G2K3N10 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G2K3N10G-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G2K3N10
Manufacturer	GOFORD
File Size	956.69 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G2K3N10 Datasheet

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Other Datasheets by GOFORD

Part Number	Description
G2K3N10G	N-Channel Enhancement Mode Power MOSFET
G2K2P10	P-Channel Enhancement Mode Power MOSFET
G2K2P10S2	Dual P-Channel Enhancement Mode Power MOSFET
G2K2P10S2E	Dual P-Channel Enhancement Mode Power MOSFET
G2K2P10SE	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G2K3N10G N-Channel Enhancement Mode Power MOSFET Description The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.