G2K3N10G Description
The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
- Part: G2K3N10G
- Manufacturer: GOFORD
- Size: 956.69 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G2K3N10 | N-Channel Enhancement Mode Power MOSFET |
| G2K2P10 | P-Channel Enhancement Mode Power MOSFET |
| G2K2P10S2 | Dual P-Channel Enhancement Mode Power MOSFET |
| G2K2P10S2E | Dual P-Channel Enhancement Mode Power MOSFET |
| G2K2P10SE | P-Channel Enhancement Mode Power MOSFET |