G2K3N10G
G2K3N10G is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
N-Channel Enhancement Mode Power MOSFET
Description
The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 2.5A < 220mΩ < 230mΩ l 100% Avalanche Tested l Ro HS pliant
Schematic diagram
Application l Power switch l DC/DC converters
SOT-89
Ordering Information
Device G2K3N10G
Package SOT-89
Marking...
