G2K3N10G Overview
The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Datasheet Details
| Part number | G2K3N10G |
|---|---|
| Datasheet | G2K3N10G-GOFORD.pdf |
| File Size | 956.69 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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