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G300N04 - N-Channel Enhancement Mode Power MOSFET

Download the G300N04 datasheet PDF. This datasheet also covers the G300N04L variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 5A < 35mΩ < 45mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G300N04L-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G300N04
Manufacturer GOFORD
File Size 876.26 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G300N04 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G300N04D3 N-Channel Enhancement Mode Power MOSFET
G300N04L N-Channel Enhancement Mode Power MOSFET
G300P06 P-Channel Enhancement Mode Power MOSFET
G300P06T P-Channel Enhancement Mode Power MOSFET
G3035 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.