G300P06T - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -40A < 30mΩ Schematic diagram.

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G300P06T p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G300P06T
Manufacturer	GOFORD
File Size	971.34 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G300P06T Datasheet

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G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.