G300P06 Overview
The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G300P06 Key Features
- 60V -40A < 30mΩ
G300P06 datasheet by GOFORD.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | G300P06 |
|---|---|
| Datasheet | G300P06 G300P06T Datasheet (PDF) |
| File Size | 971.34 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| G300P06T | P-Channel Enhancement Mode Power MOSFET |
| G300N04 | N-Channel Enhancement Mode Power MOSFET |
| G300N04D3 | N-Channel Enhancement Mode Power MOSFET |
| G300N04L | N-Channel Enhancement Mode Power MOSFET |
| G3035 | N-Channel MOSFET |
| G3035L | N-Channel MOSFET |
| G30N02 | N-Channel MOSFET |
| G30N03 | N-Channel Trench MOSFET |
| G30N03D3 | N-Channel Trench MOSFET |
| G30N04 | N-Channel Enhancement Mode Power MOSFET |