Datasheet4U Logo Datasheet4U.com

G300P06 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G300P06, a member of the G300P06T P-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -40A < 30mΩ Schematic diagram.

📥 Download Datasheet

Datasheet preview – G300P06

Datasheet Details

Part number G300P06
Manufacturer GOFORD
File Size 971.34 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G300P06 Datasheet
Additional preview pages of the G300P06 datasheet.

📁 Similar Datasheet

  • G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G30 - Voltage-Controlled Attenuator Module (MACOM)
  • G3018 - N-CHANNEL MOSFET (GTM)
  • G3018K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
  • G301K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
  • G30FG - G-Low Current High Voltage Rectifiers (HV Component)
  • G30FP - HIGH VOLTAGE DIODES (GETE ELECTRONICS)
  • G30FP - G-Low Current High Voltage Rectifiers (HV Component)
  • G30FS - Fast Recovery High Voltage Rectifier (HV Component)
Other Datasheets by GOFORD
  • G300P06T - P-Channel Enhancement Mode Power MOSFET
  • G300N04 - N-Channel Enhancement Mode Power MOSFET
  • G300N04D3 - N-Channel Enhancement Mode Power MOSFET
  • G300N04L - N-Channel Enhancement Mode Power MOSFET
  • G3035 - N-Channel MOSFET
  • G3035L - N-Channel MOSFET
  • G30N02 - N-Channel MOSFET
  • G30N03 - N-Channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Published: |