Datasheet4U Logo Datasheet4U.com

G50N03 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G50N03, a member of the G50N03D5 N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 30V 50A < 4.5mQ < 8mQ.

📥 Download Datasheet

Datasheet preview – G50N03

Datasheet Details

Part number G50N03
Manufacturer GOFORD
File Size 594.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G50N03 Datasheet
Additional preview pages of the G50N03 datasheet.

📁 Similar Datasheet

  • G50N60F - IGBT (ON Semiconductor)
  • G50N60HS - High Speed IGBT (Infineon)
  • G5001 - 300kHz DC-DC Step-Down PWM Controller (Global Mixed-mode Technology)
  • G5010 - Dual-Low On-Resistance Load Switch (Global Mixed-mode Technology)
  • G5016 - Dual Ultra-Low On-Resistance Load Switch (Global Mixed-mode Technology)
  • G5017 - low ON resistance (Ron) load switches (Global Mixed-mode Technology)
  • G501DS - GLASS PASSIVATED RECTIFIERS (Jingdao)
  • G501VS - GLASS PASSIVATED RECTIFIERS (Jingdao)
  • G5027C - Single Channel Smart Load Switch (Global Mixed-mode Technology)
  • G5029 - Single Low Ron Load Switch (Global Mixed-mode Technology)
Other Datasheets by GOFORD

Full PDF Text Transcription

Click to expand full text
G50N03D5 N-Channel Enhancement Mode Power MOSFET Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant 30V 50A < 4.
Published: |