G50N03D5 - N-Channel Enhancement Mode Power MOSFET

General Description

The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 30V 50A < 4.5mQ < 8mQ.

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G50N03D5 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G50N03D5
Manufacturer	GOFORD
File Size	594.76 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G50N03D5 Datasheet

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G50N03	N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

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G50N03D5 N-Channel Enhancement Mode Power MOSFET Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant 30V 50A < 4.