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G50N03A - MOSFET

General Description

The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

Key Features

  • VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 30V 10 mΩ 6.2 mΩ 50A.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stabilty and unifomity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number G50N03A
Manufacturer GOFORD
File Size 2.32 MB
Description MOSFET
Datasheet download datasheet G50N03A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD DESCRIPTION The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES � VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 30V 10 mΩ 6.2 mΩ 50A � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply G50N03A TO-252 HTTP://www.gofordsemi.