G50N03A Overview
The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications.
G50N03A Key Features
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stabilty and unifomity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply