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G700P06 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G700P06, a member of the G700P06LL P-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 75mΩ < 90mΩ Schematic diagram.

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Datasheet preview – G700P06

Datasheet Details

Part number G700P06
Manufacturer GOFORD
File Size 870.54 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G700P06 Datasheet
Additional preview pages of the G700P06 datasheet.

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Other Datasheets by GOFORD
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Full PDF Text Transcription

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G700P06LL P-Channel Enhancement Mode Power MOSFET Description The G700P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.
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