G700P06J Overview
The G700P06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G700P06J Key Features
- 60V -23A < 70mΩ < 85mΩ
Datasheet Details
| Part number | G700P06J |
|---|---|
| Manufacturer | GOFORD |
| File Size | 850.63 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet | G700P06J-GOFORD.pdf |
|
|