G700P06J Description
The G700P06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G700P06J Key Features
- 60V -23A < 70mΩ < 85mΩ
G700P06J is P-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Part Number | Description |
|---|---|
| G700P06 | P-Channel Enhancement Mode Power MOSFET |
| G700P06LL | P-Channel Enhancement Mode Power MOSFET |
| G700P06T | P-Channel Enhancement Mode Power MOSFET |
| G70N04 | N-Channel Enhancement Mode Power MOSFET |
| G70N04T | N-Channel Enhancement Mode Power MOSFET |
The G700P06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.