G70P02K - P-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l RDS(ON) (at VGS = -2.5V) l 100% Avalanche Tested l RoHS Compliant -20V -70A < 7.5mΩ < 8mΩ Schematic diagram.

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G70P02K P-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G70P02K

Datasheet Details

Part number	G70P02K
Manufacturer	GOFORD
File Size	598.98 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G70P02K Datasheet
Additional preview pages of the G70P02K datasheet.

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Full PDF Text Transcription

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G70P02K P-Channel Enhancement Mode Power MOSFET Description The G70P02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l RDS(ON) (at VGS = -2.5V) l 100% Avalanche Tested l RoHS Compliant -20V -70A < 7.

Published: Nov 13, 2024 |